All MOSFET. ZXMN6A07FTA Datasheet

 

ZXMN6A07FTA Datasheet and Replacement


   Type Designator: ZXMN6A07FTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.4 nS
   Cossⓘ - Output Capacitance: 19.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT-23
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ZXMN6A07FTA Datasheet (PDF)

 ..1. Size:527K  zetex
 zxmn6a07fta.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 4.1. Size:527K  zetex
 zxmn6a07ftc.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 5.1. Size:531K  diodes
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 5.2. Size:1319K  cn vbsemi
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

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History: QM2601S | 2SK4096LS | UT8205A | AOD1R4A70 | SMK0965FJ | P0460BTFS | WML11N80M3

Keywords - ZXMN6A07FTA MOSFET datasheet

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