ZXMN6A09GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN6A09GTA
   Código: ZXMN6A09
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5.4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 12.4 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 121 pF
   Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET ZXMN6A09GTA

ZXMN6A09GTA Datasheet (PDF)

..1. Size:554K zetex
zxmn6a09gta.pdf

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

5.1. Size:558K diodes
zxmn6a09g.pdf

6.1. Size:584K diodes
zxmn6a09dn8.pdf

ZXMN6A09DN860V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 5.6600.060 @ VGS= 4.5V 4.6DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

6.2. Size:631K diodes
zxmn6a09ktc.pdf

A Product Line ofDiodes IncorporatedGreenZXMN6A09K60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID BVDSS Max RDS(on) TA = 25C Fast switching speed (Note 3) Low gate drive 40m @ VGS = 10V 7.7A Lead-Free Finish; RoHS compliant (Note 1) 60V 60m @ VGS = 4.5V 6.3A Halogen and Antimony Free.

6.3. Size:624K diodes
zxmn6a09k.pdf

ZXMN6A09K60V N-channel enhancement mode MOSFET in DPAKSummary V(BR)DSS=60V : RDS(on)=0.040 ; ID=12.2A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistan

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: