ZXMN6A09GTA MOSFET Datasheet: N-Ch, 60V, 5.4A. Full specification with pinout and replacement list

ZXMN6A09GTA Specs and Replacement

Type Designator: ZXMN6A09GTA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 121 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-223

ZXMN6A09GTA substitution

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ZXMN6A09GTA datasheet

..1. Size:554K zetex
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ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.... See More ⇒

5.1. Size:558K diodes
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6.1. Size:584K diodes
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ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. ... See More ⇒

6.2. Size:631K diodes
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