Справочник MOSFET. ZXMN6A09GTA

 

ZXMN6A09GTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN6A09GTA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 121 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOT-223

 Аналог (замена) для ZXMN6A09GTA

 

 

ZXMN6A09GTA Datasheet (PDF)

 ..1. Size:554K  zetex
 zxmn6a09gta.pdf

ZXMN6A09GTA ZXMN6A09GTA

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

 5.1. Size:558K  diodes
 zxmn6a09g.pdf

ZXMN6A09GTA ZXMN6A09GTA

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

 6.1. Size:584K  diodes
 zxmn6a09dn8.pdf

ZXMN6A09GTA ZXMN6A09GTA

ZXMN6A09DN860V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 5.6600.060 @ VGS= 4.5V 4.6DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

 6.2. Size:631K  diodes
 zxmn6a09ktc.pdf

ZXMN6A09GTA ZXMN6A09GTA

A Product Line ofDiodes IncorporatedGreenZXMN6A09K60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID BVDSS Max RDS(on) TA = 25C Fast switching speed (Note 3) Low gate drive 40m @ VGS = 10V 7.7A Lead-Free Finish; RoHS compliant (Note 1) 60V 60m @ VGS = 4.5V 6.3A Halogen and Antimony Free.

 6.3. Size:624K  diodes
 zxmn6a09k.pdf

ZXMN6A09GTA ZXMN6A09GTA

ZXMN6A09K60V N-channel enhancement mode MOSFET in DPAKSummary V(BR)DSS=60V : RDS(on)=0.040 ; ID=12.2A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistan

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