ZXMN6A09GTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMN6A09GTA
Маркировка: ZXMN6A09
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12.4 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 121 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMN6A09GTA
ZXMN6A09GTA Datasheet (PDF)
zxmn6a09gta.pdf
ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.
zxmn6a09g.pdf
ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.
zxmn6a09dn8.pdf
ZXMN6A09DN860V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 5.6600.060 @ VGS= 4.5V 4.6DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.
zxmn6a09ktc.pdf
A Product Line ofDiodes IncorporatedGreenZXMN6A09K60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID BVDSS Max RDS(on) TA = 25C Fast switching speed (Note 3) Low gate drive 40m @ VGS = 10V 7.7A Lead-Free Finish; RoHS compliant (Note 1) 60V 60m @ VGS = 4.5V 6.3A Halogen and Antimony Free.
zxmn6a09k.pdf
ZXMN6A09K60V N-channel enhancement mode MOSFET in DPAKSummary V(BR)DSS=60V : RDS(on)=0.040 ; ID=12.2A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistan
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
