ZXMP3A17E6TA Todos los transistores

 

ZXMP3A17E6TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP3A17E6TA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.87 nS
   Cossⓘ - Capacitancia de salida: 113 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOT-23-6
 

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ZXMP3A17E6TA Datasheet (PDF)

 ..1. Size:152K  zetex
 zxmp3a17e6ta.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 4.1. Size:154K  diodes
 zxmp3a17e6.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 6.1. Size:164K  diodes
 zxmp3a17dn8.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistan

 7.1. Size:574K  diodes
 zxmp3a16gta.pdf pdf_icon

ZXMP3A17E6TA

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

MOSTRAR MÁS

Otros transistores... ZXMP10A18GTA , ZXMP10A18KTC , ZXMP2120E5TA , ZXMP2120FFTA , ZXMP2120G4TA , ZXMP3A13FTA , ZXMP3A16GTA , ZXMP3A16N8TA , IRFP260N , ZXMP3F30FHTA , ZXMP4A16GTA , ZXMP4A16KTC , ZXMP4A57E6TA , ZXMP6A13FQ , ZXMP6A13FTA , ZXMP6A13GTA , ZXMP6A16KTC .

History: STW60NE10 | BUK95180-100A | STW21N65M5 | AP75N07GS | RQ3L050GN | UF840KG-TF3-R | SVG15670ND

 

 
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