All MOSFET. ZXMP3A17E6TA Datasheet

 

ZXMP3A17E6TA Datasheet and Replacement


   Type Designator: ZXMP3A17E6TA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.87 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23-6
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ZXMP3A17E6TA Datasheet (PDF)

 ..1. Size:152K  zetex
 zxmp3a17e6ta.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 4.1. Size:154K  diodes
 zxmp3a17e6.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 6.1. Size:164K  diodes
 zxmp3a17dn8.pdf pdf_icon

ZXMP3A17E6TA

ZXMP3A17DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistan

 7.1. Size:574K  diodes
 zxmp3a16gta.pdf pdf_icon

ZXMP3A17E6TA

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

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