Справочник MOSFET. ZXMP3A17E6TA

 

ZXMP3A17E6TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP3A17E6TA
   Маркировка: 317
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 3.2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 8.28 nC
   Время нарастания (tr): 2.87 ns
   Выходная емкость (Cd): 113 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm
   Тип корпуса: SOT-23-6

 Аналог (замена) для ZXMP3A17E6TA

 

 

ZXMP3A17E6TA Datasheet (PDF)

 ..1. Size:152K  zetex
zxmp3a17e6ta.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 4.1. Size:154K  diodes
zxmp3a17e6.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE

 6.1. Size:164K  diodes
zxmp3a17dn8.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A17DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistan

 7.1. Size:574K  diodes
zxmp3a16gta.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

 7.2. Size:154K  diodes
zxmp3a16n8.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 7.3. Size:216K  diodes
zxmp3a13f.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A13F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23FEATURES Low on-resistance

 7.4. Size:162K  diodes
zxmp3a16g.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT223FEATURES Low on-resista

 7.5. Size:156K  diodes
zxmp3a16dn8.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A16DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistan

 7.6. Size:102K  tysemi
zxmp3a13f.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

Product specificationZXMP3A13F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23FEATURES

 7.7. Size:144K  zetex
zxmp3a16n8ta.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 7.8. Size:206K  zetex
zxmp3a13fta.pdf

ZXMP3A17E6TA ZXMP3A17E6TA

ZXMP3A13F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23FEATURES Low on-resistance

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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