IRFR5410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR5410
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.205 Ohm
   Paquete / Cubierta: TO252

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IRFR5410 Datasheet (PDF)

..1. Size:267K international rectifier
irfr5410pbf irfu5410pbf.pdf

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

..2. Size:215K international rectifier
irfr5410.pdf

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

..3. Size:267K infineon
irfr5410pbf irfu5410pbf.pdf

..4. Size:247K inchange semiconductor
irfr5410.pdf

isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

0.1. Size:220K international rectifier
auirfr5410tr.pdf

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

0.2. Size:318K infineon
auirfr5410.pdf

AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut

0.3. Size:3139K cn vbsemi
irfr5410tr.pdf

IRFR5410TRwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

Otros transistores... IRFR3303 , IRFR3910 , IRFR410 , IRFR4105 , IRFR411 , IRFR420 , IRFR420A , IRFR5305 , 18N50 , IRFR5505 , IRFR6215 , IRFR9010 , IRFR9012 , IRFR9014 , IRFR9020 , IRFR9022 , IRFR9024 .

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