All MOSFET. IRFR5410 Datasheet

 

IRFR5410 Datasheet and Replacement


   Type Designator: IRFR5410
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: TO252
 

 IRFR5410 substitution

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IRFR5410 Datasheet (PDF)

 ..1. Size:267K  international rectifier
irfr5410pbf irfu5410pbf.pdf pdf_icon

IRFR5410

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 ..2. Size:215K  international rectifier
irfr5410.pdf pdf_icon

IRFR5410

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 ..3. Size:247K  inchange semiconductor
irfr5410.pdf pdf_icon

IRFR5410

isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 0.1. Size:220K  international rectifier
auirfr5410tr.pdf pdf_icon

IRFR5410

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

Datasheet: IRFR3303 , IRFR3910 , IRFR410 , IRFR4105 , IRFR411 , IRFR420 , IRFR420A , IRFR5305 , TK10A60D , IRFR5505 , IRFR6215 , IRFR9010 , IRFR9012 , IRFR9014 , IRFR9020 , IRFR9022 , IRFR9024 .

History: SSF8205UH2 | SSP7438N | IRFB4610 | SSPL6022 | RD06HHF1 | WSD4080DN56 | IRL510PBF

Keywords - IRFR5410 MOSFET datasheet

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