All MOSFET. IRFR5410 Datasheet

 

IRFR5410 Datasheet and Replacement


   Type Designator: IRFR5410
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: TO252
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IRFR5410 Datasheet (PDF)

 ..1. Size:267K  international rectifier
irfr5410pbf irfu5410pbf.pdf pdf_icon

IRFR5410

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 ..2. Size:215K  international rectifier
irfr5410.pdf pdf_icon

IRFR5410

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 ..3. Size:247K  inchange semiconductor
irfr5410.pdf pdf_icon

IRFR5410

isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 0.1. Size:220K  international rectifier
auirfr5410tr.pdf pdf_icon

IRFR5410

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3338W | BSV236SP | HY1607P | GSM4936S | MVB50P03HDLT4G | WSD4080DN56 | ATM2N65TE

Keywords - IRFR5410 MOSFET datasheet

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