IRFR9120N Todos los transistores

 

IRFR9120N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR9120N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO252

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IRFR9120N Datasheet (PDF)

 ..1. Size:257K  international rectifier
irfr9120npbf irfu9120npbf.pdf

IRFR9120N
IRFR9120N

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 ..2. Size:117K  international rectifier
irfr9120n.pdf

IRFR9120N
IRFR9120N

PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

 ..3. Size:257K  infineon
irfr9120npbf irfu9120npbf.pdf

IRFR9120N
IRFR9120N

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 0.1. Size:911K  cn vbsemi
irfr9120ntrpbf.pdf

IRFR9120N
IRFR9120N

IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc

 6.2. Size:173K  international rectifier
irfr9120.pdf

IRFR9120N
IRFR9120N

 6.3. Size:1077K  international rectifier
irfr9120pbf irfu9120pbf.pdf

IRFR9120N
IRFR9120N

PD - 95096AIRFR9120PbFIRFU9120PbF Lead-Free1/10/05Document Number: 91280 www.vishay.com1IRFR/U9120PbFDocument Number: 91280 www.vishay.com2IRFR/U9120PbFDocument Number: 91280 www.vishay.com3IRFR/U9120PbFDocument Number: 91280 www.vishay.com4IRFR/U9120PbFDocument Number: 91280 www.vishay.com5IRFR/U9120PbFDocument Number: 91280 www.vishay.com6I

 6.4. Size:1098K  vishay
irfr9120pbf sihfr9120 sihfu9120.pdf

IRFR9120N
IRFR9120N

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 Surface Mount (IRFR9120, SiHFR9120)Qg (Max.) (nC) 18 Straight Lead (IRFU9120, SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0 P-Channel

 6.5. Size:1885K  vishay
irfr9120 irfu9120 sihfr9120 sihfu9120.pdf

IRFR9120N
IRFR9120N

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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