IRFR9120N Datasheet. Specs and Replacement
Type Designator: IRFR9120N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO252
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IRFR9120N substitution
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IRFR9120N datasheet
irfr9120npbf irfu9120npbf.pdf
PD-95020A IRFR9120NPbF IRFU9120NPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR9120N) l Straight Lead (IRFU9120N) l Advanced Process Technology RDS(on) = 0.48 G l Fast Switching l Fully Avalanche Rated ID = -6.6A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ... See More ⇒
irfr9120n.pdf
PD - 9.1507A IRFR/U9120N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) RDS(on) = 0.48 Advanced Process Technology G Fast Switching ID = -6.6A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie... See More ⇒
irfr9120ntrpbf.pdf
IRFR9120NTRPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switc... See More ⇒
Detailed specifications: IRFR9014, IRFR9020, IRFR9022, IRFR9024, IRFR9024N, IRFR9110, IRFR9111, IRFR9120, STP80NF70, IRFR9121, IRFR9210, IRFR9212, IRFR9214, IRFR9220, IRFR9222, IRFR9310, IRFRC20
Keywords - IRFR9120N MOSFET specs
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