IRFR9121 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

PD - 95096AIRFR9120PbFIRFU9120PbF Lead-Free1/10/05Document Number: 91280 www.vishay.com1IRFR/U9120PbFDocument Number: 91280 www.vishay.com2IRFR/U9120PbFDocument Number: 91280 www.vishay.com3IRFR/U9120PbFDocument Number: 91280 www.vishay.com4IRFR/U9120PbFDocument Number: 91280 www.vishay.com5IRFR/U9120PbFDocument Number: 91280 www.vishay.com6I

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 Surface Mount (IRFR9120, SiHFR9120)Qg (Max.) (nC) 18 Straight Lead (IRFU9120, SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0 P-Channel

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0

IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc