IRFR9121 MOSFET Datasheet: P-Ch, 80V, 5.9A. Full specification with pinout and replacement list

IRFR9121 Specs and Replacement

Type Designator: IRFR9121

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

IRFR9121 substitution

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IRFR9121 datasheet

..1. Size:298K 1
irfr9120 irfr9121 irfu9120 irfu9121.pdf pdf_icon

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7.1. Size:173K international rectifier
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7.2. Size:257K international rectifier
irfr9120npbf irfu9120npbf.pdf pdf_icon

PD-95020A IRFR9120NPbF IRFU9120NPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR9120N) l Straight Lead (IRFU9120N) l Advanced Process Technology RDS(on) = 0.48 G l Fast Switching l Fully Avalanche Rated ID = -6.6A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ... See More ⇒

7.3. Size:117K international rectifier
irfr9120n.pdf pdf_icon

PD - 9.1507A IRFR/U9120N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) RDS(on) = 0.48 Advanced Process Technology G Fast Switching ID = -6.6A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie... See More ⇒