IRFR9121 - описание и поиск аналогов

PD-95020A IRFR9120NPbF IRFU9120NPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR9120N) l Straight Lead (IRFU9120N) l Advanced Process Technology RDS(on) = 0.48 G l Fast Switching l Fully Avalanche Rated ID = -6.6A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

PD - 9.1507A IRFR/U9120N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) RDS(on) = 0.48 Advanced Process Technology G Fast Switching ID = -6.6A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

PD - 95096A IRFR9120PbF IRFU9120PbF Lead-Free 1/10/05 Document Number 91280 www.vishay.com 1 IRFR/U9120PbF Document Number 91280 www.vishay.com 2 IRFR/U9120PbF Document Number 91280 www.vishay.com 3 IRFR/U9120PbF Document Number 91280 www.vishay.com 4 IRFR/U9120PbF Document Number 91280 www.vishay.com 5 IRFR/U9120PbF Document Number 91280 www.vishay.com 6 I

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 Surface Mount (IRFR9120, SiHFR9120) Qg (Max.) (nC) 18 Straight Lead (IRFU9120, SiHFU9120) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 9.0 P-Channel

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* Surface Mount (IRFR9120/SiHFR9120) COMPLIANT Qg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 9.0

IRFR9120NTRPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switc