SI2392ADS Todos los transistores

 ..1. Size:251K  vishay
 si2392ads.pdf

Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.126 at VGS = 10 V 3.1 Material categorization 100 0.144 at VGS = 6 V 2.9 2.9 nC For definitions of compliance please see 0.189 at VGS = 4.5 V 2.6 www.vishay.com/doc?99912 SOT

 9.1. Size:172K  vishay
 si2399ds.pdf

Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 10 V - 6e TrenchFET Power MOSFET - 20 0.045 at VGS = - 4.5 V - 6e 10 nC 100 % Rg Tested 0.067 at VGS = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/EC APPLICATIO

 9.2. Size:1699K  kexin
 si2399ds-3.pdf

SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 34m (VGS = -10V) 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum R

 9.3. Size:1691K  kexin
 si2399ds.pdf

SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 RDS(ON) 34m (VGS = -10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Rati

 9.4. Size:892K  cn vbsemi
 si2399ds-t1.pdf

Si2399DS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.5. Size:905K  cn vbsemi
 si2399cds-t1.pdf

Si2399CDS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SO