SI2392ADS - аналоги, параметры транзистора - Справочник транзисторов

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Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.126 at VGS = 10 V 3.1 Material categorization 100 0.144 at VGS = 6 V 2.9 2.9 nC For definitions of compliance please see 0.189 at VGS = 4.5 V 2.6 www.vishay.com/doc?99912 SOT

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Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 10 V - 6e TrenchFET Power MOSFET - 20 0.045 at VGS = - 4.5 V - 6e 10 nC 100 % Rg Tested 0.067 at VGS = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/EC APPLICATIO

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SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 34m (VGS = -10V) 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum R

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SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 RDS(ON) 34m (VGS = -10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Rati