Si2392ADSwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.126 at VGS = 10 V 3.1 Material categorization: 100 0.144 at VGS = 6 V 2.9 2.9 nCFor definitions of compliance please see 0.189 at VGS = 4.5 V 2.6www.vishay.com/doc?99912 SOT

Si2399DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.034 at VGS = - 10 V - 6e TrenchFET Power MOSFET- 20 0.045 at VGS = - 4.5 V - 6e 10 nC 100 % Rg Tested0.067 at VGS = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

SMD Type MOSFETP-Channel MOSFETSI2399DS (KI2399DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = -20V ID = -6A 1 2+0.02+0.10.15 -0.02 RDS(ON) 34m (VGS = -10V) 0.95 -0.1+0.11.9 -0.2 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum R

SMD Type MOSFETP-Channel MOSFETSI2399DS (KI2399DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = -20V ID = -6A 1 2 RDS(ON) 34m (VGS = -10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Rati

Si2399DS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Si2399CDS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SO