All MOSFET. SI2392ADS Datasheet

 

SI2392ADS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2392ADS
   Marking Code: G2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.126 Ohm
   Package: SOT-23

 SI2392ADS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2392ADS Datasheet (PDF)

 ..1. Size:251K  vishay
 si2392ads.pdf

SI2392ADS SI2392ADS

Si2392ADSwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.126 at VGS = 10 V 3.1 Material categorization: 100 0.144 at VGS = 6 V 2.9 2.9 nCFor definitions of compliance please see 0.189 at VGS = 4.5 V 2.6www.vishay.com/doc?99912 SOT

 9.1. Size:172K  vishay
 si2399ds.pdf

SI2392ADS SI2392ADS

Si2399DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.034 at VGS = - 10 V - 6e TrenchFET Power MOSFET- 20 0.045 at VGS = - 4.5 V - 6e 10 nC 100 % Rg Tested0.067 at VGS = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

 9.2. Size:1699K  kexin
 si2399ds-3.pdf

SI2392ADS SI2392ADS

SMD Type MOSFETP-Channel MOSFETSI2399DS (KI2399DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = -20V ID = -6A 1 2+0.02+0.10.15 -0.02 RDS(ON) 34m (VGS = -10V) 0.95 -0.1+0.11.9 -0.2 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum R

 9.3. Size:1691K  kexin
 si2399ds.pdf

SI2392ADS SI2392ADS

SMD Type MOSFETP-Channel MOSFETSI2399DS (KI2399DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = -20V ID = -6A 1 2 RDS(ON) 34m (VGS = -10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Rati

 9.4. Size:892K  cn vbsemi
 si2399ds-t1.pdf

SI2392ADS SI2392ADS

Si2399DS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.5. Size:905K  cn vbsemi
 si2399cds-t1.pdf

SI2392ADS SI2392ADS

Si2399CDS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SO

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