SI3404 Todos los transistores

 

SI3404 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3404

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.1 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SOT-23

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SI3404 datasheet

 ..1. Size:356K  vishay
si3404.pdf pdf_icon

SI3404

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI3404 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel High dense cell design for extremely low RDS(ON) Rugged and reliable Enhancement Mode Lead free product is acquired SOT-23 Package Field Effect Transistor Marking Code R4 Epoxy mee

 ..2. Size:428K  mcc
si3404.pdf pdf_icon

SI3404

SI3404 Features High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating

 ..3. Size:1878K  cn szxunrui
si3404.pdf pdf_icon

SI3404

SOT-23 Plastic-Encapsulate MOSFETS SI3404 SI3404 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.025 @ 10V 3 30V 5.8A 1.GATE 0.035 @ 4.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Equivalent Circuit MARKING Surface mount package A46TF w APPLICATION Load Switch for Portable Devices DC/DC Converter

 9.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3404

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9

Otros transistores... SI2365EDS , SI2367DS , SI2371EDS , SI2374DS , SI2392ADS , SI3127DV , SI3134K , SI3139K , AO4468 , SI3407DV , SI3410DV , SI3415 , SI3417DV , SI3420 , SI3421DV , SI3424BDV , SI3424CDV .

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