SI3404 PDF and Equivalents Search

 

SI3404 Specs and Replacement

Type Designator: SI3404

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.1 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT-23

SI3404 substitution

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SI3404 datasheet

 ..1. Size:356K  vishay
si3404.pdf pdf_icon

SI3404

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI3404 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel High dense cell design for extremely low RDS(ON) Rugged and reliable Enhancement Mode Lead free product is acquired SOT-23 Package Field Effect Transistor Marking Code R4 Epoxy mee... See More ⇒

 ..2. Size:428K  mcc
si3404.pdf pdf_icon

SI3404

SI3404 Features High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating ... See More ⇒

 ..3. Size:1878K  cn szxunrui
si3404.pdf pdf_icon

SI3404

SOT-23 Plastic-Encapsulate MOSFETS SI3404 SI3404 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.025 @ 10V 3 30V 5.8A 1.GATE 0.035 @ 4.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Equivalent Circuit MARKING Surface mount package A46TF w APPLICATION Load Switch for Portable Devices DC/DC Converter ... See More ⇒

 9.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3404

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9... See More ⇒

Detailed specifications: SI2365EDS, SI2367DS, SI2371EDS, SI2374DS, SI2392ADS, SI3127DV, SI3134K, SI3139K, AO4468, SI3407DV, SI3410DV, SI3415, SI3417DV, SI3420, SI3421DV, SI3424BDV, SI3424CDV

Keywords - SI3404 MOSFET specs

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