SI3417DV Todos los transistores

 

SI3417DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3417DV
   Código: BH*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0252 Ohm
   Paquete / Cubierta: TSOP-6

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SI3417DV Datasheet (PDF)

 ..1. Size:216K  vishay
si3417dv.pdf

SI3417DV
SI3417DV

Si3417DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0252 at VGS = - 10 V - 8- 30 15 nCFor definitions of compliance please see 0.0360 at VGS = - 4.5 V - 8www.vishay.com/doc?99912AvailableTSOP-6Top ViewAPPL

 9.1. Size:610K  vishay
si3415.pdf

SI3417DV
SI3417DV

 9.2. Size:191K  vishay
si3410dv.pdf

SI3417DV
SI3417DV

Si3410DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V 8APPLICATIONS Notebook Load Switch Low Current dc-to-dcTSOP-6 T

 9.3. Size:1291K  mcc
si3415a.pdf

SI3417DV
SI3417DV

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

 9.4. Size:669K  mcc
si3415b.pdf

SI3417DV
SI3417DV

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH

 9.5. Size:430K  mcc
si3415.pdf

SI3417DV
SI3417DV

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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