SI3417DV - описание и поиск аналогов

Si3417DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0252 at VGS = - 10 V - 8 - 30 15 nC For definitions of compliance please see 0.0360 at VGS = - 4.5 V - 8 www.vishay.com/doc?99912 Available TSOP-6 Top View APPL

Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET 30 9.2 nC Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8 APPLICATIONS Notebook Load Switch Low Current dc-to-dc TSOP-6 T

SI3415A Features High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55oC to +150oC

SI3415B Features High Density Cell Design For Ultra Low RDS(on) High Speed Switching P-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET Technology Enhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH