SI3417DV Datasheet and Replacement

Si3417DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0252 at VGS = - 10 V - 8- 30 15 nCFor definitions of compliance please see 0.0360 at VGS = - 4.5 V - 8www.vishay.com/doc?99912AvailableTSOP-6Top ViewAPPL

Si3410DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V 8APPLICATIONS Notebook Load Switch Low Current dc-to-dcTSOP-6 T

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH