SI3442CDV Todos los transistores

 ..1. Size:214K  vishay
 si3442cdv.pdf

Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.027 at VGS = 10 V 8d For definitions of compliance please see 20 0.030 at VGS = 4.5 V 7.5 4.3 nC www.vishay.com/doc?99912 0.049 at VGS = 2.5 V 6.1 APPLICATIONS TSO

 ..2. Size:841K  cn vbsemi
 si3442cdv.pdf

SI3442CDV www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC

 8.1. Size:179K  vishay
 si3442bdv.pdf

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering

 8.2. Size:177K  vishay
 si3442bd.pdf

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering

 8.3. Size:71K  vishay
 si3442dv.pdf

March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.075 @ VGS =2.7 V. high cell density, DMOS technology. This very high density process is tai