SI3442CDV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3442CDV
Marking Code: BE*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 94
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package:
TSOP-6
SI3442CDV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3442CDV
Datasheet (PDF)
..1. Size:214K vishay
si3442cdv.pdf 
Si3442CDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.027 at VGS = 10 V 8dFor definitions of compliance please see20 0.030 at VGS = 4.5 V 7.5 4.3 nCwww.vishay.com/doc?999120.049 at VGS = 2.5 V 6.1APPLICATIONSTSO
..2. Size:841K cn vbsemi
si3442cdv.pdf
SI3442CDVwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC
8.1. Size:179K vishay
si3442bdv.pdf
Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering
8.2. Size:177K vishay
si3442bd.pdf
Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering
8.3. Size:71K vishay
si3442dv.pdf
March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 Veffect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.075 @ VGS =2.7 V.high cell density, DMOS technology. This very high densityprocess is tai
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