SI3442CDV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI3442CDV
Маркировка: BE*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.7 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 94 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
Тип корпуса: TSOP-6
SI3442CDV Datasheet (PDF)
si3442cdv.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Si3442CDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.027 at VGS = 10 V 8dFor definitions of compliance please see20 0.030 at VGS = 4.5 V 7.5 4.3 nCwww.vishay.com/doc?999120.049 at VGS = 2.5 V 6.1APPLICATIONSTSO
si3442cdv.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SI3442CDVwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC
si3442bdv.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering
si3442bd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering
si3442dv.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 Veffect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.075 @ VGS =2.7 V.high cell density, DMOS technology. This very high densityprocess is tai
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![SI3442CDV](https://alltransistors.com/images/us.png)
![SI3442CDV](https://alltransistors.com/images/es.png)
![SI3442CDV](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C