SI3447BDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3447BDV
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET SI3447BDV
SI3447BDV Datasheet (PDF)
si3447bdv.pdf
Si3447BDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET: 1.8 V Rated0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/ECAPPL
si3447cdv.pdf
Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS
si3447dv.pdf
Si3447DVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.050 @ VGS = -4.5 V "5.2-12 0.070 @ VGS = -2.5 V "4.40.095 @ VGS = -1.8 V "3.8(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage V
si3447cd.pdf
Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918