SI3447BDV PDF and Equivalents Search

 

SI3447BDV Specs and Replacement

Type Designator: SI3447BDV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSOP-6

SI3447BDV substitution

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SI3447BDV datasheet

 ..1. Size:181K  vishay
si3447bdv.pdf pdf_icon

SI3447BDV

Si3447BDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET 1.8 V Rated 0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance 0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/EC APPL... See More ⇒

 8.1. Size:210K  vishay
si3447cdv.pdf pdf_icon

SI3447BDV

Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized 0.050 at VGS = - 2.5 V - 6.6 12 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.068 at VGS = - 1.8 V - 5.6 APPLICATIONS ... See More ⇒

 8.2. Size:47K  vishay
si3447dv.pdf pdf_icon

SI3447BDV

Si3447DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = -4.5 V "5.2 -12 0.070 @ VGS = -2.5 V "4.4 0.095 @ VGS = -1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V... See More ⇒

 8.3. Size:209K  vishay
si3447cd.pdf pdf_icon

SI3447BDV

Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized 0.050 at VGS = - 2.5 V - 6.6 12 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.068 at VGS = - 1.8 V - 5.6 APPLICATIONS ... See More ⇒

Detailed specifications: SI3442DV, SI3443BDV, SI3443CDV, SI3443DDV, SI3443DVTR, SI3445ADV, SI3445DV, SI3446ADV, IRFP250N, SI3447CDV, SI3451DV, SI3453DV, SI3454ADV, SI3454CDV, SI3455ADV, SI3456BDV, SI3456CDV

Keywords - SI3447BDV MOSFET specs

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