SI3458BDV Todos los transistores

 

SI3458BDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3458BDV
   Código: AN*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4.1 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TSOP-6

 Búsqueda de reemplazo de MOSFET SI3458BDV

 

SI3458BDV Datasheet (PDF)

 ..1. Size:211K  vishay
si3458bdv.pdf

SI3458BDV SI3458BDV

Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli

 6.1. Size:209K  vishay
si3458bd.pdf

SI3458BDV SI3458BDV

Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli

 8.1. Size:177K  vishay
si3458dv.pdf

SI3458BDV SI3458BDV

Si3458DVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.10 at VGS = 10 V 3.2 TrenchFET Power MOSFET600.13 at VGS = 4.5 V 2.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm

 9.1. Size:85K  fairchild semi
si3457dv.pdf

SI3458BDV SI3458BDV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

 9.2. Size:191K  vishay
si3457cd.pdf

SI3458BDV SI3458BDV

New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code

 9.3. Size:177K  vishay
si3459dv.pdf

SI3458BDV SI3458BDV

Si3459DVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET- 600.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View1 6 (4) S3 mm 5 2 (3) G3 4 2.85 mm (1, 2, 5, 6

 9.4. Size:176K  vishay
si3454adv.pdf

SI3458BDV SI3458BDV

Si3454ADVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 10 V 4.5 TrenchFET Power MOSFET300.085 at VGS = 4.5 V 3.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.8

 9.5. Size:207K  vishay
si3454cdv.pdf

SI3458BDV SI3458BDV

Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP

 9.6. Size:208K  vishay
si3459bdv.pdf

SI3458BDV SI3458BDV

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

 9.7. Size:66K  vishay
si3454dv.pdf

SI3458BDV SI3458BDV

Si3454DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.065 @ VGS = 10 V 4.230300.095 @ VGS = 4.5 V 3.4(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3454DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS

 9.8. Size:193K  vishay
si3456ddv.pdf

SI3458BDV SI3458BDV

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

 9.9. Size:65K  vishay
si3456dv.pdf

SI3458BDV SI3458BDV

Si3456DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 10 V 5.130300.065 @ VGS = 4.5 V 4.3(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3456DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS

 9.10. Size:84K  vishay
si3455dv.pdf

SI3458BDV SI3458BDV

Si3455DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS Available0.100 @ VGS = -10 V "3.5 Compliant-30300.190 @ VGS = -4.5 V "2.5(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETOrdering Information: Si3455DV-T1Si3455DV-T

 9.11. Size:177K  vishay
si3455adv.pdf

SI3458BDV SI3458BDV

Si3455ADVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs- 300.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(4) S1 63 mm52(3) G3 42.85 mmOrdering Inform

 9.12. Size:224K  vishay
si3453dv.pdf

SI3458BDV SI3458BDV

New ProductSi3453DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.165 at VGS = - 10 V - 3.4 100 % Rg Tested- 30 2.4 nC0.276 at VGS = - 4.5 V - 2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Mobil

 9.13. Size:182K  vishay
si3456bdv.pdf

SI3458BDV SI3458BDV

Si3456BDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET300.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.

 9.14. Size:190K  vishay
si3456cd.pdf

SI3458BDV SI3458BDV

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

 9.15. Size:205K  vishay
si3454cd.pdf

SI3458BDV SI3458BDV

Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP

 9.16. Size:191K  vishay
si3456cdv.pdf

SI3458BDV SI3458BDV

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

 9.17. Size:206K  vishay
si3459bd.pdf

SI3458BDV SI3458BDV

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

 9.18. Size:192K  vishay
si3457cdv.pdf

SI3458BDV SI3458BDV

New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code

 9.19. Size:181K  vishay
si3457bdv.pdf

SI3458BDV SI3458BDV

Si3457BDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFETs- 300.100 at VGS = - 4.5 V - 3.7TSOP-6Top View1 6(4) S3 mm52(3) G3 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3457BDV-T1-E3 (Lead (

 9.20. Size:191K  vishay
si3456dd.pdf

SI3458BDV SI3458BDV

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

 9.21. Size:210K  vishay
si3451dv.pdf

SI3458BDV SI3458BDV

Si3451DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.115 at VGS = - 4.5 V - 2.8 TrenchFET Power MOSFET- 20 3.2 nC PWM Optimized0.205 at VGS = - 2.5 V - 2.1 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View (4)

 9.22. Size:70K  vishay
si3457dv.pdf

SI3458BDV SI3458BDV

Si3457DVVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS( ) (W) ID (A)VDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 10 V "4.330300.100 @ VGS = 4.5 V "3.4(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sour

 9.23. Size:202K  onsemi
si3457dv.pdf

SI3458BDV SI3458BDV

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.24. Size:862K  cn vbsemi
si3456ddv-t1.pdf

SI3458BDV SI3458BDV

SI3456DDV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC

 9.25. Size:1441K  cn vbsemi
si3457cdv.pdf

SI3458BDV SI3458BDV

SI3457CDVwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-C

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History: STD20NF10 | FDD8770 | VSE003N04MSC-G

 

 
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History: STD20NF10 | FDD8770 | VSE003N04MSC-G

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