SI3458BDV PDF and Equivalents Search

 

SI3458BDV Specs and Replacement

Type Designator: SI3458BDV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TSOP-6

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SI3458BDV datasheet

 ..1. Size:211K  vishay
si3458bdv.pdf pdf_icon

SI3458BDV

Si3458BDV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET 60 3.5 nC 100 % Rg Tested 0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Appli... See More ⇒

 6.1. Size:209K  vishay
si3458bd.pdf pdf_icon

SI3458BDV

Si3458BDV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET 60 3.5 nC 100 % Rg Tested 0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Appli... See More ⇒

 8.1. Size:177K  vishay
si3458dv.pdf pdf_icon

SI3458BDV

Si3458DV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.10 at VGS = 10 V 3.2 TrenchFET Power MOSFET 60 0.13 at VGS = 4.5 V 2.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm... See More ⇒

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3458BDV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchild s advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga... See More ⇒

Detailed specifications: SI3454ADV, SI3454CDV, SI3455ADV, SI3456BDV, SI3456CDV, SI3456DDV, SI3457BDV, SI3457CDV, IRFP260, SI3459BDV, SI3460DDV, SI3460DV, SI3464DV, SI3465DV, SI3467DV, SI3473CDV, SI3473DV

Keywords - SI3458BDV MOSFET specs

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