SI3458BDV Datasheet and Replacement

Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli

Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli

Si3458DVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.10 at VGS = 10 V 3.2 TrenchFET Power MOSFET600.13 at VGS = 4.5 V 2.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code

Si3459DVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET- 600.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View1 6 (4) S3 mm 5 2 (3) G3 4 2.85 mm (1, 2, 5, 6

Si3454ADVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 10 V 4.5 TrenchFET Power MOSFET300.085 at VGS = 4.5 V 3.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.8

Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

Si3454DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.065 @ VGS = 10 V 4.230300.095 @ VGS = 4.5 V 3.4(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3454DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

Si3456DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 10 V 5.130300.065 @ VGS = 4.5 V 4.3(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3456DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS

Si3455DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS Available0.100 @ VGS = -10 V "3.5 Compliant-30300.190 @ VGS = -4.5 V "2.5(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETOrdering Information: Si3455DV-T1Si3455DV-T

Si3455ADVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs- 300.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(4) S1 63 mm52(3) G3 42.85 mmOrdering Inform

New ProductSi3453DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.165 at VGS = - 10 V - 3.4 100 % Rg Tested- 30 2.4 nC0.276 at VGS = - 4.5 V - 2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Mobil

Si3456BDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET300.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code

Si3457BDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFETs- 300.100 at VGS = - 4.5 V - 3.7TSOP-6Top View1 6(4) S3 mm52(3) G3 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3457BDV-T1-E3 (Lead (

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

Si3451DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.115 at VGS = - 4.5 V - 2.8 TrenchFET Power MOSFET- 20 3.2 nC PWM Optimized0.205 at VGS = - 2.5 V - 2.1 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View (4)

Si3457DVVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS( ) (W) ID (A)VDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 10 V "4.330300.100 @ VGS = 4.5 V "3.4(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sour

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SI3456DDV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC

SI3457CDVwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-C