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SI3459BDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3459BDV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.216 Ohm
   Paquete / Cubierta: TSOP-6
 

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SI3459BDV Datasheet (PDF)

 ..1. Size:208K  vishay
si3459bdv.pdf pdf_icon

SI3459BDV

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

 6.1. Size:206K  vishay
si3459bd.pdf pdf_icon

SI3459BDV

New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

 8.1. Size:177K  vishay
si3459dv.pdf pdf_icon

SI3459BDV

Si3459DVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET- 600.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View1 6 (4) S3 mm 5 2 (3) G3 4 2.85 mm (1, 2, 5, 6

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3459BDV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

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History: HM4840

 

 
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