SI3459BDV Todos los transistores

 

SI3459BDV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3459BDV

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.216 Ohm

Encapsulados: TSOP-6

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SI3459BDV datasheet

 ..1. Size:208K  vishay
si3459bdv.pdf pdf_icon

SI3459BDV

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch

 6.1. Size:206K  vishay
si3459bd.pdf pdf_icon

SI3459BDV

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch

 8.1. Size:177K  vishay
si3459dv.pdf pdf_icon

SI3459BDV

Si3459DV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET - 60 0.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3459BDV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchild s advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

Otros transistores... SI3454CDV , SI3455ADV , SI3456BDV , SI3456CDV , SI3456DDV , SI3457BDV , SI3457CDV , SI3458BDV , 4435 , SI3460DDV , SI3460DV , SI3464DV , SI3465DV , SI3467DV , SI3473CDV , SI3473DV , SI3474DV .

 

 

 

 

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