SI3459BDV PDF and Equivalents Search

 

SI3459BDV Specs and Replacement

Type Designator: SI3459BDV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.216 Ohm

Package: TSOP-6

SI3459BDV substitution

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SI3459BDV datasheet

 ..1. Size:208K  vishay
si3459bdv.pdf pdf_icon

SI3459BDV

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch... See More ⇒

 6.1. Size:206K  vishay
si3459bd.pdf pdf_icon

SI3459BDV

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch... See More ⇒

 8.1. Size:177K  vishay
si3459dv.pdf pdf_icon

SI3459BDV

Si3459DV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET - 60 0.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6... See More ⇒

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3459BDV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchild s advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga... See More ⇒

Detailed specifications: SI3454CDV, SI3455ADV, SI3456BDV, SI3456CDV, SI3456DDV, SI3457BDV, SI3457CDV, SI3458BDV, 4435, SI3460DDV, SI3460DV, SI3464DV, SI3465DV, SI3467DV, SI3473CDV, SI3473DV, SI3474DV

Keywords - SI3459BDV MOSFET specs

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