SI3459BDV. Аналоги и основные параметры
Наименование производителя: SI3459BDV
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 40 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.216 Ohm
Тип корпуса: TSOP-6
Аналог (замена) для SI3459BDV
- подборⓘ MOSFET транзистора по параметрам
SI3459BDV даташит
..1. Size:208K vishay
si3459bdv.pdf 

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch
6.1. Size:206K vishay
si3459bd.pdf 

New Product Si3459BDV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET - 60 4.4 nC 100 % Rg Tested 0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch
8.1. Size:177K vishay
si3459dv.pdf 

Si3459DV Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET - 60 0.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6
9.1. Size:85K fairchild semi
si3457dv.pdf 

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchild s advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga
9.2. Size:211K vishay
si3458bdv.pdf 

Si3458BDV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET 60 3.5 nC 100 % Rg Tested 0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Appli
9.3. Size:191K vishay
si3457cd.pdf 

New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code
9.4. Size:177K vishay
si3458dv.pdf 

Si3458DV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.10 at VGS = 10 V 3.2 TrenchFET Power MOSFET 60 0.13 at VGS = 4.5 V 2.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm
9.5. Size:176K vishay
si3454adv.pdf 

Si3454ADV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 10 V 4.5 TrenchFET Power MOSFET 30 0.085 at VGS = 4.5 V 3.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.8
9.6. Size:207K vishay
si3454cdv.pdf 

Si3454CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET 30 2.6 100 % Rg Tested 0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC TSOP
9.7. Size:66K vishay
si3454dv.pdf 

Si3454DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.065 @ VGS = 10 V 4.2 30 30 0.095 @ VGS = 4.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3454DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS
9.8. Size:193K vishay
si3456ddv.pdf 

New Product Si3456DDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET 30 2.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 4.5 V 5.7 APPLICATIONS Load Switch HDD DC/DC Conve
9.9. Size:65K vishay
si3456dv.pdf 

Si3456DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.045 @ VGS = 10 V 5.1 30 30 0.065 @ VGS = 4.5 V 4.3 (1, 2, 5, 6) D TSOP-6 Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3456DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS
9.10. Size:84K vishay
si3455dv.pdf 

Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Available 0.100 @ VGS = -10 V "3.5 Compliant -30 30 0.190 @ VGS = -4.5 V "2.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information Si3455DV-T1 Si3455DV-T
9.11. Size:177K vishay
si3455adv.pdf 

Si3455ADV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs - 30 0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (4) S 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Inform
9.12. Size:224K vishay
si3453dv.pdf 

New Product Si3453DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.165 at VGS = - 10 V - 3.4 100 % Rg Tested - 30 2.4 nC 0.276 at VGS = - 4.5 V - 2.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Mobil
9.13. Size:182K vishay
si3456bdv.pdf 

Si3456BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET 30 0.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.
9.14. Size:190K vishay
si3456cd.pdf 

Si3456CDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET 30 4 nC Compliant to RoHS Directive 2002/95/EC 0.052 at VGS = 4.5 V 6.3 APPLICATIONS Load Switch HDD TSOP-6 Top View D D 1
9.15. Size:205K vishay
si3454cd.pdf 

Si3454CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET 30 2.6 100 % Rg Tested 0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC TSOP
9.16. Size:191K vishay
si3456cdv.pdf 

Si3456CDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET 30 4 nC Compliant to RoHS Directive 2002/95/EC 0.052 at VGS = 4.5 V 6.3 APPLICATIONS Load Switch HDD TSOP-6 Top View D D 1
9.17. Size:209K vishay
si3458bd.pdf 

Si3458BDV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET 60 3.5 nC 100 % Rg Tested 0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Appli
9.18. Size:192K vishay
si3457cdv.pdf 

New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code
9.19. Size:181K vishay
si3457bdv.pdf 

Si3457BDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFETs - 30 0.100 at VGS = - 4.5 V - 3.7 TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information Si3457BDV-T1-E3 (Lead (
9.20. Size:191K vishay
si3456dd.pdf 

New Product Si3456DDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET 30 2.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 4.5 V 5.7 APPLICATIONS Load Switch HDD DC/DC Conve
9.21. Size:210K vishay
si3451dv.pdf 

Si3451DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.115 at VGS = - 4.5 V - 2.8 TrenchFET Power MOSFET - 20 3.2 nC PWM Optimized 0.205 at VGS = - 2.5 V - 2.1 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (4)
9.22. Size:70K vishay
si3457dv.pdf 

Si3457DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS( ) (W) ID (A) VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.3 30 30 0.100 @ VGS = 4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Sour
9.23. Size:202K onsemi
si3457dv.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.24. Size:862K cn vbsemi
si3456ddv-t1.pdf 

SI3456DDV-T1 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC
9.25. Size:1441K cn vbsemi
si3457cdv.pdf 

SI3457CDV www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-C
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