SI3493DV Todos los transistores

 ..1. Size:199K  vishay
 si3493dv.pdf

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET 1.8 V Rated 0.035 at VGS = - 2.5 V - 6.2 - 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC

 7.1. Size:227K  vishay
 si3493ddv.pdf

Si3493DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Single TrenchFET Gen III p-channel power MOSFET S 4 RDS(on) rating at VGS = -1.8 V D 5 D 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see 3 www.vishay.com/doc?99912 G 2 D APPLICATIONS 1 S D Battery management in mobile d

 8.1. Size:190K  vishay
 si3493bd.pdf

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

 8.2. Size:192K  vishay
 si3493bdv.pdf

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv