SI3493DV PDF and Equivalents Search

 

SI3493DV Specs and Replacement

Type Designator: SI3493DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSOP-6

SI3493DV substitution

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SI3493DV datasheet

 ..1. Size:199K  vishay
 si3493dv.pdf pdf_icon

SI3493DV

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET 1.8 V Rated 0.035 at VGS = - 2.5 V - 6.2 - 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC... See More ⇒

 7.1. Size:227K  vishay
 si3493ddv.pdf pdf_icon

SI3493DV

Si3493DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Single TrenchFET Gen III p-channel power MOSFET S 4 RDS(on) rating at VGS = -1.8 V D 5 D 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see 3 www.vishay.com/doc?99912 G 2 D APPLICATIONS 1 S D Battery management in mobile d... See More ⇒

 8.1. Size:190K  vishay
 si3493bd.pdf pdf_icon

SI3493DV

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv... See More ⇒

 8.2. Size:192K  vishay
 si3493bdv.pdf pdf_icon

SI3493DV

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv... See More ⇒

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Detailed specifications: SI3473DV, SI3474DV, SI3476DV, SI3477DV, SI3481DV, SI3483CDV, SI3483DV, SI3493BDV, STP80NF70, SI3495DV, SI3499DV, SI3552DV, SI3585CDV, SI3586DV, SI3588DV, SI3590DV, SI3805DV

Keywords - SI3493DV MOSFET specs

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