SI3495DV Todos los transistores

 

SI3495DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3495DV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

SI3495DV Datasheet (PDF)

 ..1. Size:180K  vishay
 si3495dv.pdf pdf_icon

SI3495DV

Si3495DVVishay SiliconixP-Channel 20-V (D-S), 1.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.030 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 200.038 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = -

 9.1. Size:190K  vishay
 si3493bd.pdf pdf_icon

SI3495DV

Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

 9.2. Size:199K  vishay
 si3499dv.pdf pdf_icon

SI3495DV

Si3499DVVishay SiliconixP-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.023 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.029 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 8 280.036 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = - 1.5

 9.3. Size:227K  vishay
 si3493ddv.pdf pdf_icon

SI3495DV

Si3493DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Single TrenchFET Gen III p-channel power MOSFETS4 RDS(on) rating at VGS = -1.8 VD5D 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see3www.vishay.com/doc?99912G2DAPPLICATIONS1 SD Battery management in mobile d

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HMS21N60F | MTN50N06E3 | IPI051N15N5 | FCPF16N60 | SM3116NAF | CPC3730 | SSFT4004

 

 
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