All MOSFET. SI3495DV Datasheet

 

SI3495DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3495DV

SMD Transistor Code: 95*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 5 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.75 V

Maximum Drain Current |Id|: 5.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 36 nS

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TSOP-6

SI3495DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3495DV Datasheet (PDF)

1.1. si3495dv.pdf Size:180K _vishay

SI3495DV
SI3495DV

Si3495DV Vishay Siliconix P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.024 at VGS = - 4.5 V - 7 • TrenchFET® Power MOSFET: 1.5 V Rated 0.030 at VGS = - 2.5 V - 6.2 • Ultra-Low On-Resistance - 20 0.038 at VGS = - 1.8 V - 5.2 • 100 % Rg Tested 0.048 at VGS = -

5.1. si3493bdv.pdf Size:192K _vishay

SI3495DV
SI3495DV

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V • TrenchFET® Power MOSFET - 8.0a • PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC • 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 • Compliant to RoHS Directiv

5.2. si3493dv.pdf Size:199K _vishay

SI3495DV
SI3495DV

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.027 at VGS = - 4.5 V - 7 • TrenchFET® Power MOSFET: 1.8 V Rated 0.035 at VGS = - 2.5 V - 6.2 - 20 21 • Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 • Compliant to RoHS Directive 2002/95/EC

 5.3. si3499dv.pdf Size:199K _vishay

SI3495DV
SI3495DV

Si3499DV Vishay Siliconix P-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7 • TrenchFET® Power MOSFET: 1.5 V Rated 0.029 at VGS = - 2.5 V - 6.2 • Ultra-Low On-Resistance - 8 28 0.036 at VGS = - 1.8 V - 5.2 • 100 % Rg Tested 0.048 at VGS = - 1.5

5.4. si3493bd.pdf Size:190K _vishay

SI3495DV
SI3495DV

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directive 2002/95/EC A

Datasheet: SI3474DV , SI3476DV , SI3477DV , SI3481DV , SI3483CDV , SI3483DV , SI3493BDV , SI3493DV , IRFP4232 , SI3499DV , SI3552DV , SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV .

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