SI3495DV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3495DV
Marking Code: 95*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.75
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 36
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TSOP-6
SI3495DV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3495DV
Datasheet (PDF)
..1. Size:180K vishay
si3495dv.pdf
Si3495DVVishay SiliconixP-Channel 20-V (D-S), 1.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.030 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 200.038 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = -
9.1. Size:190K vishay
si3493bd.pdf
Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv
9.2. Size:199K vishay
si3499dv.pdf
Si3499DVVishay SiliconixP-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.023 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.029 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 8 280.036 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = - 1.5
9.3. Size:227K vishay
si3493ddv.pdf
Si3493DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Single TrenchFET Gen III p-channel power MOSFETS4 RDS(on) rating at VGS = -1.8 VD5D 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see3www.vishay.com/doc?99912G2DAPPLICATIONS1 SD Battery management in mobile d
9.4. Size:199K vishay
si3493dv.pdf
Si3493DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.8 V Rated0.035 at VGS = - 2.5 V - 6.2- 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC
9.5. Size:192K vishay
si3493bdv.pdf
Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.