Справочник MOSFET. SI3495DV

 

SI3495DV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI3495DV
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 36 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для SI3495DV

 

 

SI3495DV Datasheet (PDF)

 ..1. Size:180K  vishay
 si3495dv.pdf

SI3495DV SI3495DV

Si3495DVVishay SiliconixP-Channel 20-V (D-S), 1.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.030 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 200.038 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = -

 9.1. Size:190K  vishay
 si3493bd.pdf

SI3495DV SI3495DV

Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

 9.2. Size:199K  vishay
 si3499dv.pdf

SI3495DV SI3495DV

Si3499DVVishay SiliconixP-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.023 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.029 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 8 280.036 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = - 1.5

 9.3. Size:227K  vishay
 si3493ddv.pdf

SI3495DV SI3495DV

Si3493DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Single TrenchFET Gen III p-channel power MOSFETS4 RDS(on) rating at VGS = -1.8 VD5D 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see3www.vishay.com/doc?99912G2DAPPLICATIONS1 SD Battery management in mobile d

 9.4. Size:199K  vishay
 si3493dv.pdf

SI3495DV SI3495DV

Si3493DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.8 V Rated0.035 at VGS = - 2.5 V - 6.2- 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC

 9.5. Size:192K  vishay
 si3493bdv.pdf

SI3495DV SI3495DV

Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

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