SI4398DY Todos los transistores

 

SI4398DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4398DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 1340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: SO-8
 

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SI4398DY Datasheet (PDF)

 ..1. Size:239K  vishay
 si4398dy.pdf pdf_icon

SI4398DY

Si4398DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0028 at VGS = 10 V 2520 Extremely Low Qgd for Switching Losses0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPP

 9.1. Size:93K  vishay
 si4392ady.pdf pdf_icon

SI4398DY

Si4392ADYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)a Qg (Typ)Low Switching LossesRoHS0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFETCOMPLIANT12 nC30 100 % Rg Tested0.0115 at VGS = 4.5 V 17.4APPLICATIONS High-Side DC/DC Conv

 9.2. Size:81K  vishay
 si4394dy.pdf pdf_icon

SI4398DY

Si4394DYNew ProductVishay SiliconixN-Channel Reduced Qgd, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology forVDS (V) rDS(on) ()ID (A)Switching LossesRoHS0.00825 at VGS = 10 V 1530 TrenchFET Power MOSFET COMPLIANT0.00975 at VGS = 4.5 V 14 100 % Rg TestedAPPLICATIONS High-Side DC/DC Conversion- Notebook- S

 9.3. Size:78K  vishay
 si4392dy.pdf pdf_icon

SI4398DY

Si4392DYVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)Switching LossesAvailable0.00975 at VGS = 10 V 12.530 TrenchFET Power MOSFETRoHS*0.01375 at VGS = 4.5 V 10.0COMPLIANT 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- Notebook

MOSTRAR MÁS

Otros transistores... SI4354DY , SI4362BDY , SI4368DY , SI4378DY , SI4384DY , SI4386DY , SI4390DY , SI4396DY , 2N7000 , SI4401BDY , SI4401DDY , SI4401DY , SI4403BDY , SI4403CDY , SI4404DY , SI4406DY , SI4408DY .

History: 12N65KL-TF3-T | IXFP60N25X3

 

 
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