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SI4398DY Spec and Replacement


   Type Designator: SI4398DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: SO-8

 SI4398DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4398DY Specs

 ..1. Size:239K  vishay
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SI4398DY

Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0028 at VGS = 10 V 25 20 Extremely Low Qgd for Switching Losses 0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APP... See More ⇒

 9.1. Size:93K  vishay
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SI4398DY

Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) Low Switching Losses RoHS 0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFET COMPLIANT 12 nC 30 100 % Rg Tested 0.0115 at VGS = 4.5 V 17.4 APPLICATIONS High-Side DC/DC Conv... See More ⇒

 9.2. Size:81K  vishay
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SI4398DY

Si4394DY New Product Vishay Siliconix N-Channel Reduced Qgd, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( )ID (A) Switching Losses RoHS 0.00825 at VGS = 10 V 15 30 TrenchFET Power MOSFET COMPLIANT 0.00975 at VGS = 4.5 V 14 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook - S... See More ⇒

 9.3. Size:78K  vishay
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SI4398DY

Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( )ID (A) Switching Losses Available 0.00975 at VGS = 10 V 12.5 30 TrenchFET Power MOSFET RoHS* 0.01375 at VGS = 4.5 V 10.0 COMPLIANT 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook ... See More ⇒

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Detailed specifications: SI4354DY , SI4362BDY , SI4368DY , SI4378DY , SI4384DY , SI4386DY , SI4390DY , SI4396DY , AON7408 , SI4401BDY , SI4401DDY , SI4401DY , SI4403BDY , SI4403CDY , SI4404DY , SI4406DY , SI4408DY .

History: SI7139DP

Keywords - SI4398DY MOSFET specs

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