Справочник MOSFET. SI4398DY

 

SI4398DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4398DY
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 34 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 1340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SI4398DY

 

 

SI4398DY Datasheet (PDF)

 ..1. Size:239K  vishay
 si4398dy.pdf

SI4398DY SI4398DY

Si4398DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0028 at VGS = 10 V 2520 Extremely Low Qgd for Switching Losses0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPP

 9.1. Size:93K  vishay
 si4392ady.pdf

SI4398DY SI4398DY

Si4392ADYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)a Qg (Typ)Low Switching LossesRoHS0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFETCOMPLIANT12 nC30 100 % Rg Tested0.0115 at VGS = 4.5 V 17.4APPLICATIONS High-Side DC/DC Conv

 9.2. Size:81K  vishay
 si4394dy.pdf

SI4398DY SI4398DY

Si4394DYNew ProductVishay SiliconixN-Channel Reduced Qgd, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology forVDS (V) rDS(on) ()ID (A)Switching LossesRoHS0.00825 at VGS = 10 V 1530 TrenchFET Power MOSFET COMPLIANT0.00975 at VGS = 4.5 V 14 100 % Rg TestedAPPLICATIONS High-Side DC/DC Conversion- Notebook- S

 9.3. Size:78K  vishay
 si4392dy.pdf

SI4398DY SI4398DY

Si4392DYVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)Switching LossesAvailable0.00975 at VGS = 10 V 12.530 TrenchFET Power MOSFETRoHS*0.01375 at VGS = 4.5 V 10.0COMPLIANT 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- Notebook

 9.4. Size:219K  vishay
 si4390dy.pdf

SI4398DY SI4398DY

Si4390DYVishay SiliconixN-Channel Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0095 at VGS = 10 V 12.5 Extremely Low Qgd for Switching Losses300.0135 at VGS = 4.5 V 10.5 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.5. Size:87K  vishay
 si4396dy.pdf

SI4398DY SI4398DY

Si4396DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0115 at VGS = 10 V 1630 TrenchFET Power MOSFET13.3 nC0.016 at VGS = 4.5 V 12.7 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Noteb

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