SI4420DYPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4420DYPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO-8

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SI4420DYPBF Datasheet (PDF)

..1. Size:114K vishay
si4420dypbf si4420dytrpbf.pdf

PD - 95729Si4420DYPbFHEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DVDSS = 30Vl Low Gate Charge2 7S Dl Surface Mount3 6S Dl Logic Level Drive4 5l Lead-Free G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-res

6.1. Size:111K international rectifier
si4420dy.pdf

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

6.2. Size:281K fairchild semi
si4420dy.pdf

January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc

6.3. Size:106K vishay
si4420dytr.pdf

6.4. Size:58K vishay
si4420dy.pdf

Si4420DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.009 @ VGS = 10 V 13.530300.013 @ VGS = 4.5 V 11DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SOrdering Information: Si4420DYN-Channel MOSFETSi4420DY-T1 (with Tape and Reel)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

6.5. Size:943K cn vbsemi
si4420dy.pdf

SI4420DYwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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