All MOSFET. SI4420DYPBF Datasheet

 

SI4420DYPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4420DYPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8

 SI4420DYPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4420DYPBF Datasheet (PDF)

 ..1. Size:114K  vishay
 si4420dypbf si4420dytrpbf.pdf

SI4420DYPBF SI4420DYPBF

PD - 95729Si4420DYPbFHEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DVDSS = 30Vl Low Gate Charge2 7S Dl Surface Mount3 6S Dl Logic Level Drive4 5l Lead-Free G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-res

 6.1. Size:111K  international rectifier
 si4420dy.pdf

SI4420DYPBF SI4420DYPBF

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

 6.2. Size:281K  fairchild semi
 si4420dy.pdf

SI4420DYPBF SI4420DYPBF

January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc

 6.3. Size:106K  vishay
 si4420dytr.pdf

SI4420DYPBF SI4420DYPBF

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

 6.4. Size:58K  vishay
 si4420dy.pdf

SI4420DYPBF SI4420DYPBF

Si4420DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.009 @ VGS = 10 V 13.530300.013 @ VGS = 4.5 V 11DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SOrdering Information: Si4420DYN-Channel MOSFETSi4420DY-T1 (with Tape and Reel)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

 6.5. Size:943K  cn vbsemi
 si4420dy.pdf

SI4420DYPBF SI4420DYPBF

SI4420DYwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWI120R45VT | SKI06073 | SIA810DJ | STP55N05L | IRFS151

 

 
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