SI4420DYPBF - Даташиты. Аналоги. Основные параметры

PD - 95729 Si4420DYPbF HEXFET Power MOSFET l N-Channel MOSFET A A l Low On-Resistance 1 8 S D VDSS = 30V l Low Gate Charge 2 7 S D l Surface Mount 3 6 S D l Logic Level Drive 4 5 l Lead-Free G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-res

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 W @ VGS = 4.5 V that has been especially tailored to minimize on-state resistance and yet maintain superior switc

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

Si4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.009 @ VGS = 10 V 13.5 30 30 0.013 @ VGS = 4.5 V 11 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S Ordering Information Si4420DY N-Channel MOSFET Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

SI4420DY www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to RoHS