SI4564DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4564DY
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: SO-8

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SI4564DY Datasheet (PDF)

..1. Size:148K vishay
si4564dy.pdf

Si4564DYVishay SiliconixN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0175 at VGS = 10 V 10 TrenchFET Power MOSFETN-Channel 40 9.80.020 at VGS = 4.5 V 9.2 100 % Rg and UIS Tested0.021 at VGS = - 10 V - 9.2 Compliant to RoHS Directive 2002/95/EC

9.1. Size:268K vishay
si4563dy.pdf

Si4563DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.016 at VGS = 10 V8 TrenchFET Power MOSFETN-Channel 40 560.019 at VGS = 4.5 V8 100 % Rg Tested0.025 at VGS = - 10 V - 8P-Channel - 40 6APPLICATIONS0.032 at VGS = - 4.5 V - 7.

9.2. Size:264K vishay
si4562dy.pdf

Si4562DYVishay SiliconixN- and P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET: 2.5 RatedN-Channel 200.035 at VGS = 2.5 V Compliant to RoHS directive 2002/95/EC6.00.033 at VGS = - 4.5 V - 6.2P-Channel - 200.050 at VGS = -

9.3. Size:269K vishay
si4569dy.pdf

Si4569DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 40 9.60.032 at VGS = 4.5 V 4.8 100 % Rg and UIS Tested0.029 at VGS = - 10 V - 6.0APPLICATIONSP-Channel - 40 210.039 at

9.4. Size:275K vishay
si4561dy.pdf

Si4561DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS Qg RDS(on) ()ID (A)aAvailable(V) (Typ.) TrenchFET Power MOSFET0.0355 at VGS = 10 V 6.8N-Channel 40 5.30.0425 at VGS = 4.5 V 6.2APPLICATIONS0.035 at VGS = - 10 V - 7.2P-Channel - 40 17 Backlight Inverter for LCD Disp

9.5. Size:283K vishay
si4565ady.pdf

Si4565ADYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.039 at VGS = 10 V 6.6 TrenchFET Power MOSFETN-Channel 40 6.6 100 % Rg and UIS Tested0.050 at VGS = 4.5 V 5.80.054 at VGS = - 10 V - 4.5APPLICATIONSP-Channel - 40 90.072 at VGS

9.6. Size:269K vishay
si4567dy.pdf

Si4567DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Qg (Typ.)AvailableVDS (V) RDS(on) () ID (A)a TrenchFET Power MOSFET0.060 at VGS = 10 V 5.0 100 % Rg TestedN-Channel 40 5.60.070 at VGS = 4.5 V 4.70.085 at VGS = - 10 V - 4.4APPLICATIONSN-Channel - 40 60.122 at VGS = - 4.5 V

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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