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SI4564DY Spec and Replacement


   Type Designator: SI4564DY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: SO-8

 SI4564DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4564DY Specs

 ..1. Size:148K  vishay
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SI4564DY

Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0175 at VGS = 10 V 10 TrenchFET Power MOSFET N-Channel 40 9.8 0.020 at VGS = 4.5 V 9.2 100 % Rg and UIS Tested 0.021 at VGS = - 10 V - 9.2 Compliant to RoHS Directive 2002/95/EC ... See More ⇒

 9.1. Size:268K  vishay
si4563dy.pdf pdf_icon

SI4564DY

Si4563DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.016 at VGS = 10 V 8 TrenchFET Power MOSFET N-Channel 40 56 0.019 at VGS = 4.5 V 8 100 % Rg Tested 0.025 at VGS = - 10 V - 8 P-Channel - 40 6 APPLICATIONS 0.032 at VGS = - 4.5 V - 7.... See More ⇒

 9.2. Size:264K  vishay
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SI4564DY

Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 2.5 Rated N-Channel 20 0.035 at VGS = 2.5 V Compliant to RoHS directive 2002/95/EC 6.0 0.033 at VGS = - 4.5 V - 6.2 P-Channel - 20 0.050 at VGS = -... See More ⇒

 9.3. Size:269K  vishay
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SI4564DY

Si4569DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFET N-Channel 40 9.6 0.032 at VGS = 4.5 V 4.8 100 % Rg and UIS Tested 0.029 at VGS = - 10 V - 6.0 APPLICATIONS P-Channel - 40 21 0.039 at ... See More ⇒

Detailed specifications: SI4493DY , SI4497DY , SI4500BDY , SI4501BDY , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , MMIS60R580P , SI4590DY , SI4599DY , SI4618DY , SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY .

History: IXFN32N120 | SI4590DY | IXFN32N100Q3

Keywords - SI4564DY MOSFET specs

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