SI4564DY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4564DY
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175
Ohm
Package:
SO-8
SI4564DY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4564DY
Datasheet (PDF)
..1. Size:148K vishay
si4564dy.pdf 
Si4564DYVishay SiliconixN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0175 at VGS = 10 V 10 TrenchFET Power MOSFETN-Channel 40 9.80.020 at VGS = 4.5 V 9.2 100 % Rg and UIS Tested0.021 at VGS = - 10 V - 9.2 Compliant to RoHS Directive 2002/95/EC
9.1. Size:268K vishay
si4563dy.pdf
Si4563DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.016 at VGS = 10 V8 TrenchFET Power MOSFETN-Channel 40 560.019 at VGS = 4.5 V8 100 % Rg Tested0.025 at VGS = - 10 V - 8P-Channel - 40 6APPLICATIONS0.032 at VGS = - 4.5 V - 7.
9.2. Size:264K vishay
si4562dy.pdf
Si4562DYVishay SiliconixN- and P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET: 2.5 RatedN-Channel 200.035 at VGS = 2.5 V Compliant to RoHS directive 2002/95/EC6.00.033 at VGS = - 4.5 V - 6.2P-Channel - 200.050 at VGS = -
9.3. Size:269K vishay
si4569dy.pdf
Si4569DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 40 9.60.032 at VGS = 4.5 V 4.8 100 % Rg and UIS Tested0.029 at VGS = - 10 V - 6.0APPLICATIONSP-Channel - 40 210.039 at
9.4. Size:275K vishay
si4561dy.pdf
Si4561DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS Qg RDS(on) ()ID (A)aAvailable(V) (Typ.) TrenchFET Power MOSFET0.0355 at VGS = 10 V 6.8N-Channel 40 5.30.0425 at VGS = 4.5 V 6.2APPLICATIONS0.035 at VGS = - 10 V - 7.2P-Channel - 40 17 Backlight Inverter for LCD Disp
9.5. Size:283K vishay
si4565ady.pdf
Si4565ADYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.039 at VGS = 10 V 6.6 TrenchFET Power MOSFETN-Channel 40 6.6 100 % Rg and UIS Tested0.050 at VGS = 4.5 V 5.80.054 at VGS = - 10 V - 4.5APPLICATIONSP-Channel - 40 90.072 at VGS
9.6. Size:269K vishay
si4567dy.pdf
Si4567DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Qg (Typ.)AvailableVDS (V) RDS(on) () ID (A)a TrenchFET Power MOSFET0.060 at VGS = 10 V 5.0 100 % Rg TestedN-Channel 40 5.60.070 at VGS = 4.5 V 4.70.085 at VGS = - 10 V - 4.4APPLICATIONSN-Channel - 40 60.122 at VGS = - 4.5 V
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