SI4590DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI4590DY Datasheet (PDF)

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Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.057 at VGS = 10 V 5.6 N-Channel 100 4 Material categorization 0.072 at VGS = 4.5 V 5 For definitions of compliance please see 0.183 at VGS = -10 V -3.4 P-Channel -100 11.

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New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0355 at VGS = 10 V 6.8 100 % Rg Tested N-Channel 40 5.3 RoHS 0.0425 at VGS = 4.5 V 6.2 100 % UIS Tested COMPLIANT 0.045 at VGS = - 10 V - 5.8 APPLICATIONS P-Channel - 40 11.8 0.

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SI4599DY www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS

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