SI4590DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4590DY Datasheet (PDF)

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Si4590DYwww.vishay.comVishay SiliconixN- and P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.057 at VGS = 10 V 5.6N-Channel 100 4 Material categorization:0.072 at VGS = 4.5 V 5For definitions of compliance please see0.183 at VGS = -10 V -3.4P-Channel -100 11.

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New ProductSi4599DYVishay SiliconixN- and P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0355 at VGS = 10 V 6.8 100 % Rg TestedN-Channel 40 5.3RoHS0.0425 at VGS = 4.5 V 6.2 100 % UIS TestedCOMPLIANT0.045 at VGS = - 10 V - 5.8APPLICATIONSP-Channel - 40 11.80.

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SI4599DYwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

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