SI4590DY Spec and Replacement
Type Designator: SI4590DY
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SO-8
SI4590DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4590DY Specs
si4590dy.pdf
Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.057 at VGS = 10 V 5.6 N-Channel 100 4 Material categorization 0.072 at VGS = 4.5 V 5 For definitions of compliance please see 0.183 at VGS = -10 V -3.4 P-Channel -100 11.... See More ⇒
si4599dy.pdf
New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0355 at VGS = 10 V 6.8 100 % Rg Tested N-Channel 40 5.3 RoHS 0.0425 at VGS = 4.5 V 6.2 100 % UIS Tested COMPLIANT 0.045 at VGS = - 10 V - 5.8 APPLICATIONS P-Channel - 40 11.8 0.... See More ⇒
si4599dy.pdf
SI4599DY www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS ... See More ⇒
Detailed specifications: SI4497DY , SI4500BDY , SI4501BDY , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , AOD4184A , SI4599DY , SI4618DY , SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY .
History: SI5936DU
Keywords - SI4590DY MOSFET specs
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History: SI5936DU
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