SI4866BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4866BDY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 16.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1305 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SI4866BDY

SI4866BDY Datasheet (PDF)

..1. Size:235K vishay
si4866bdy.pdf

Si4866BDYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0053 at VGS = 4.5 V 21.5 TrenchFET Power MOSFET0.006 at VGS = 2.5 V 12 20.2 29.5 nC 100 % Rg and UIS Tested0.0074 at VGS = 1.8 V 18.2APPLICATIONS Synchronous Rectifier Poi

6.1. Size:232K vishay
si4866bd.pdf

8.1. Size:224K vishay
si4866dy.pdf

Si4866DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0055 at VGS = 4.5 V 17 TrenchFET Power MOSFETs120.008 at VGS = 2.5 V 14 PWM Optimized for High Efficiency Low Output Voltage 100 % Rg Tested APPLICATIONS Synchronous

9.1. Size:224K vishay
si4862dy.pdf

Si4862DYVishay SiliconixN-Channel 16-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0033 at VGS = 4.5 V 25 TrenchFET Power MOSFETs: 2.5 V Rated160.0055 at VGS = 2.5 V 20 Low 3.3 m RDS(on) Low Gate Resistance 100 % Rg Tested APPLICATIONS Synchronous Rectification

9.2. Size:224K vishay
si4864dy.pdf

Si4864DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0035 at VGS = 4.5 V 25 TrenchFET Power MOSFETs: 2.5 V Rated200.0047 at VGS = 2.5 V 20 Low 3.5 m RDS(on) PWM (Qgd and Rg) Optimized APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC

9.3. Size:224K vishay
si4860dy.pdf

Si4860DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.008 at VGS = 10 V 16 TrenchFET Power MOSFETs300.011 at VGS = 4.5 V 15 PWM Optimized for High Efficiency 100 % Rg Tested APPLICATIONS Buck Converter- High Side- Low Sid

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: