All MOSFET. SI4866BDY Datasheet

 

SI4866BDY Datasheet and Replacement


   Type Designator: SI4866BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 16.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: SO-8
 

 SI4866BDY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI4866BDY Datasheet (PDF)

 ..1. Size:235K  vishay
 si4866bdy.pdf pdf_icon

SI4866BDY

Si4866BDYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0053 at VGS = 4.5 V 21.5 TrenchFET Power MOSFET0.006 at VGS = 2.5 V 12 20.2 29.5 nC 100 % Rg and UIS Tested0.0074 at VGS = 1.8 V 18.2APPLICATIONS Synchronous Rectifier Poi

 6.1. Size:232K  vishay
 si4866bd.pdf pdf_icon

SI4866BDY

Si4866BDYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0053 at VGS = 4.5 V 21.5 TrenchFET Power MOSFET0.006 at VGS = 2.5 V 12 20.2 29.5 nC 100 % Rg and UIS Tested0.0074 at VGS = 1.8 V 18.2APPLICATIONS Synchronous Rectifier Poi

 8.1. Size:224K  vishay
 si4866dy.pdf pdf_icon

SI4866BDY

Si4866DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0055 at VGS = 4.5 V 17 TrenchFET Power MOSFETs120.008 at VGS = 2.5 V 14 PWM Optimized for High Efficiency Low Output Voltage 100 % Rg Tested APPLICATIONS Synchronous

 9.1. Size:224K  vishay
 si4862dy.pdf pdf_icon

SI4866BDY

Si4862DYVishay SiliconixN-Channel 16-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0033 at VGS = 4.5 V 25 TrenchFET Power MOSFETs: 2.5 V Rated160.0055 at VGS = 2.5 V 20 Low 3.3 m RDS(on) Low Gate Resistance 100 % Rg Tested APPLICATIONS Synchronous Rectification

SHOW MORE

Datasheet: SI4840DY , SI4842BDY , SI4848DY , SI4850EY , SI4858DY , SI4860DY , SI4862DY , SI4864DY , IRF530 , SI4866DY , SI4874BDY , SI4880DY , SI4884BDY , SI4886DY , SI4888DY , SI4890BDY , SI4890DY .

History: NTMFS4833NS | HYG060P04LQ1V | HIRF730F | ME4468-G | NTB5412NT4G

Keywords - SI4866BDY MOSFET datasheet

 SI4866BDY cross reference
 SI4866BDY equivalent finder
 SI4866BDY lookup
 SI4866BDY substitution
 SI4866BDY replacement

 

 
Back to Top

 


 
.